Significant progress has been made in the research of semiconductor bit devices
Significant progress has been made in the research of semiconductor bit devices
In the near future, microelectronics Moore's law predicted the size reduced to a series of physical limits, the technology advancement of researchers using nanotechnology to seek a complete information processing scheme based on quantum effects. After nearly twenty years of development, semiconductor quantum dot spin qubit solid-state device which can control the scalability and become the most potential applications in solid-state quantum computing has become one of the solutions, in condensed matter physics background, integration of the frontier of condensed matter theory, quantum physics, nano technology, Nano Electronics, low temperature technology, semiconductor technology and so on the direction of the cross research field. Recently, Peking University School of information science and technology, Beijing Key Laboratory of solid state quantum devices "research group of Professor Xu Hongqi, thousands of people plan", and China Semiconductor Research Institute of semiconductor superlattices, state key laboratory researcher Zhao Jianhua research group, for the first time using indium arsenide (InAs) nanowires prepared by semiconductor coupling with high tunability three quantum dot quantum devices, and electronic devices, the steady configuration of coherent transport and the distance between the electrons in the quantum dots through virtual state assisted tunneling physical exchange process of the long range was measured. The research shows that linear semiconductor nanowires three quantum dot system can be used for general quantum devices based on the platform, and has the potential to build spin quantum devices and quantum bit time, electricity regulation looks dry computing chip. InAs semiconductor material has high electron mobility and smaller electron effective mass, large round factor and strong spin orbit coupling. In this study, a joint task group using gate array technology to advanced local bottom, in a single crystal of pure phase InAs nano line structure three series coupled quantum dot structure, which limits the local potential barrier and quantum dots in quantum dots and quantum dots electrochemical potential between the tunneling coupling strength can be regulated independently; quantum dots transmission measuring and regulating the transport properties in ultra low temperature dilution refrigerator environment complete. For the first time in the semiconductor InAs nanowire three quantum dot device, a fine gate modulation technique is used to realize the coherent coupling of three quantum dots with the emphasis of energy degeneracy four. The study also through coherent electronic transport measurements confirmed that at the middle point of the Coulomb blockade in quantum state, quantum dots are separated by intermediate ends of quantum dots can still achieve coherent tunneling through strong coupling, the single electron capable of long-range coherent exchange between distal two quantum dots, which show the physical process the interaction of exchange. The transport properties of coherent transport electron linear three quantum dot devices based on relevant research results to "pure InAs nanowires structure (Coherenttransportinalineartriplequantumdotmadefromapure-phaseInAsnanowire)" in the title, published in June 2017 in the "nano letters" (NanoLetters; DOI:10.1021/acs.nanolett.7b00927). Wang Jiyin, PhD, of the school of information science and technology of Peking University, is the first author, and Professor Xu Hongqi and associate professor Huang Shaoyun are co - authors.
